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ZXMN3A04K 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK SUMMARY V(BR)DSS=30V : RDS(on)=0.02 ; ID=18.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * DPAK (TO252) package DPAK APPLICATIONS * DC-DC converters * Power management functions * Disconnect switches * Motor control PINOUT ORDERING INFORMATION DEVICE REEL SIZE 13" TAPE WIDTH 16mm QUANTITY PER REEL 2500 units ZXMN3A04KTC DEVICE MARKING * ZXMN 3A04K TOP VIEW ISSUE 1 - FEBRUARY 2004 1 SEMICONDUCTORS ZXMN3A04K ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Gate-source voltage Continuous drain current @ V GS =10V; T A =25C (b) SYMBOL V DSS V GS ID @ V GS =10V; T A =70C (b) @ V GS =10V; T A =25C (a) (c) (b) LIMIT 30 20 18.4 14.7 12.0 UNIT V V A A A A A A W mW/C W mW/C W mW/C C Pulsed drain current I DM IS I SM PD PD PD T j , T stg 66 11.5 66 4.3 34.4 10.1 80.8 2.15 17.2 -55 to +150 Continuous source current (body diode) Pulsed source current (body diode) (c) Power dissipation at T A =25C (a) Linear derating factor Power dissipation at T A =25C (b) Linear derating factor Power dissipation at T A =25C (d) Linear derating factor Operating and storage temperature range THERMAL RESISTANCE PARAMETER Junction to ambient (a) Junction to ambient Junction to ambient (b) (d) SYMBOL R JA R JA R JA VALUE 29 12.3 58 UNIT C/W C/W C/W NOTES (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at 10 sec. (c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum junction temperature. (d) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 1 - FEBRUARY 2004 SEMICONDUCTORS 2 ZXMN3A04K TYPICAL CHARACTERISTICS ISSUE 1 - FEBRUARY 2004 3 SEMICONDUCTORS ZXMN3A04K ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER STATIC Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state resistance (1) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS V (BR)DSS I DSS I GSS V GS(th) R DS(on) 30 0.5 100 1.0 0.02 0.03 V A nA V I D = 250 A, V GS =0V V DS = 30V, V GS =0V V GS =20V, V DS =0V I D = 250mA, V DS =V GS V GS = 10V, I D = 12A V GS = 4.5V, I D = 9.8A Forward transconductance DYNAMIC (3) (1) (3) g fs 22.1 S V DS = 15V, I D = 12.6A Input capacitance Output capacitance Reverse transfer capacitance SWITCHING (2) (3) C iss C oss C rss 1890 349 218 pF pF pF V DS = 15V, V GS =0V f=1MHz Turn-on-delay time Rise time Turn-off delay time Fall time Total gate charge t d(on) tr t d(off) tf Qg Qg Q gs Q gd 5.2 6.1 38.1 20.2 19.9 ns ns ns ns nC V DS = 15V, V GS = 5V I D = 6.5A V DS = 15V, V GS = 10V I D = 6.5A V DD = 15V, I D = 1A R G 6.0 , V GS = 10V Total gate charge Gate-source charge Gate drain charge SOURCE-DRAIN DIODE Diode forward voltage (1) Reverse recovery time (3) Reverse recovery charge (3) 36.8 5.8 7.1 nC nC nC V SD t rr Q rr 0.85 18.4 11 0.95 V ns nC T j =25C, I S = 6.8A, V GS =0V T j =25C, I S = 2.3A, di/dt=100A/ s NOTES (1) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - FEBRUARY 2004 SEMICONDUCTORS 4 ZXMN3A04K TYPICAL CHARACTERISTICS ISSUE 1 - FEBRUARY 2004 5 SEMICONDUCTORS ZXMN3A04K TYPICAL CHARACTERISTICS ISSUE 1 - FEBRUARY 2004 SEMICONDUCTORS 6 ZXMN3A04K PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS DIM A A1 b b2 b3 c c2 D D1 E E1 0.635 0.762 5.20 0.457 0.457 5.97 5.20 6.35 4.32 6.73 Millimeters Min 2.18 Max 2.38 0.127 0.89 1.114 5.46 0.609 0.584 6.22 0.025 0.030 0.205 0.018 0.018 0.235 0.205 0.250 0.170 0.265 Inches Min 0.086 Max 0.094 0.005 0.035 0.045 0.215 0.024 0.023 0.245 DIM e H L L1 L2 L3 L4 L5 1 Millimeters Min Max Inches Min Max 2.30 BSC 9.40 1.40 10.41 1.78 0.090 BSC 0.370 0.055 0.410 0.070 2.74 REF 0.051 BSC 0.89 0.635 1.14 0 0 1.27 1.01 1.52 10 15 0.108 REF 0.020 BSC 0.035 0.025 0.045 0 0 0.050 0.040 0.060 10 15 (c) Zetex plc 2004 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquaters Zetex plc Fields New Road, Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - FEBRUARY 2004 7 SEMICONDUCTORS |
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